Nomenclatura
The Part number is an essential part of the device identification process.
Depending on where the parts are made the part numbers will mean something
different. For example, The European nomencalature is different fron the
Japanese nomenclature which is different from the North American nomenclature.
Parts of each of these nomenclatures means something different. They
represent information that is important to the way the device is used. For
example, what matierial the device is made out of, applications it can be
used for, and a series of number that distinguish that part from all others so
one can find device specifications and parts that may be compatible with the
part that is being looked up.
European Semiconductor Numbering System
BFR90
|| | Third, Fourth, Fith Character(Serial Code)
|| Y## Industrial service (No letter Z)
|| ## is a W## Registration number from 10_99
|| 100- Device for consumer or entertainment
|| 999 use.
||
||
First letter---||----Second Leter(Type)]
(Material)
A Germanium A Low Power diode,
voltage-variable capacitor
B Silicon B Varicap
C Compound Materials C Small-signal audio transistor
such as cadmium
sulfide or gallium
arsenide used in
semiconductor devices.
(energy gap band of
1.3 or more eV.)
D Materials with an D Audio power transistor
energy gap of less
than 0.6 eV such as
Indium antimonide.
R Radiation detectors, E tunnel diode
photo-conductive cells,
Hall-effect generators
and so on
F Small-signal RF transistor
G Miscellaneous
H Field Probe
K Hall Generator
L RF-Power transistor
M Hall modulators and multipliers
P Photo diode, photo-resistor
,photo-conductive cell(LDR),
Radiation device.
R Low-power controlled rectifier
S Low-power switching transistor
T Breakdown devices,high-power
controlled rectifier,Schottky
diode, Thyristor,pnpn diodes.
U High-powered switching transistor
X Multiplier diode
Y High-power rectifier(diode)
Z Zener diode
Japanese Nomenclature
i ii iii iv v 2 S C 82D A
i) Kind of device, indicating the number of effective electrical connections minus one.
ii) For a semiconductor registered with the EIAJ this letter is always an S.
iii) Third letter designates the polarity and application, as follows:
A PNP transistor, high-frequency
B PNP transistor, low-frequency
C NPN transistor, high-frequency
D NPN transistor, low-frequency
E P-gate thyristor
F N-gate thyristor
H N-base unijunction transistor
J P-channel FET
K N-channel FET M Bi-directional triode thyristor
iv) These figures designate the order of application for EIAj registration, starting with 11.
v) This letter indicates the level of improvement. An improved device may be used in place of a previous-generation device , but not necessarily the other way around.
